SI ETCHING METHOD

摘要

PROBLEM TO BE SOLVED: To enable high-speed etching by simultaneously improving mask selection ratio and shape of anisotropy in the etching process of Si. SOLUTION: For the plasma etching to an Si wafer W placed on a susceptor 2 within a processing vessel 1, a mixed gas obtained by adding silicon fluoride, for example, SiF4 to phosphorus fluoride or carbon fluoride, for example, SF6/O2gas system is introduced as the etching gas to the processing vessel 1 from a processing gas supplying system 23. The etching gas discharged from a shower head 20 is converted to plasma through the electrical discharge, and the wafer W is etched with radical or ion generated with the plasma. COPYRIGHT: (C)2004,JPO