发明名称 METHOD FOR WORKING SURFACE BY GAS-PLASMA
摘要 PROBLEM TO BE SOLVED: To provide a method which can form bright and smooth hardened layers on the surfaces of articles without producing nitrogen compound layers or suppressing the formation of the nitrogen compound layers to a negligible level, and can deposit the films which have excellent adhesivity and are hardly peelable even if the high-hardness compound films of TiN, TiC, SiO<SB>2</SB>, Al<SB>2</SB>O<SB>3</SB>, etc., are deposited by physical vapor deposition, chemical vapor deposition, etc., without grinding or polishing the surfaces of the articles, the compound films of MoS<SB>2</SB>etc., having excellent lubricity, etc., are deposited. SOLUTION: The articles 30, 31, and 32 are placed in an atmosphere in which gaseous nitrogen is diluted by at least gaseous hydrogen. While the gaseous nitrogen is kept at a concentration below 30vol%, the surfaces of the articles 30, 31, and 32 are subjected to a discharge and the gaseous nitrogen and various kinds of active species existing in a plasma are reacted with the articles 30, 31, and 32, thereby forming the bright and smooth hardened layers on the surfaces of the articles 30, 31, and 32. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004084025(A) 申请公布日期 2004.03.18
申请号 JP20020248065 申请日期 2002.08.28
申请人 NIPPON DENSHI KOGYO KK 发明人 FUNAKI YOSHIYUKI;ITO KYOJI;TAKEUCHI HIROTSUGU;URAO RYOICHI
分类号 C23C8/36;C23C14/32;(IPC1-7):C23C8/36 主分类号 C23C8/36
代理机构 代理人
主权项
地址