发明名称 NITROGEN SOURCES FOR MOLECULAR BEAM EPITAXY
摘要 MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline substrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen-containing layers can be formed using such nitrogen sources.
申请公布号 WO2004022819(A1) 申请公布日期 2004.03.18
申请号 WO2003US27463 申请日期 2003.09.04
申请人 HONEYWELL INTERNATIONAL INC. 发明人 JOHNSON, RALPH, H.;GUENTER, JAMES, K.;KIM, JIN, K.
分类号 C30B23/02;H01L21/205 主分类号 C30B23/02
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