发明名称 |
NITROGEN SOURCES FOR MOLECULAR BEAM EPITAXY |
摘要 |
MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline substrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen-containing layers can be formed using such nitrogen sources. |
申请公布号 |
WO2004022819(A1) |
申请公布日期 |
2004.03.18 |
申请号 |
WO2003US27463 |
申请日期 |
2003.09.04 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
JOHNSON, RALPH, H.;GUENTER, JAMES, K.;KIM, JIN, K. |
分类号 |
C30B23/02;H01L21/205 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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