| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film deposition method in which an SiO<SB>2</SB>thin film having high purity and free from defects is continuously deposited on a substrate for a long time without causing the cracking and chipping of a target material even if the power to be applied to the target is increased in the deposition of an SiO<SB>2</SB>film using a reactive sputtering method, and to provide a film-deposited article. <P>SOLUTION: In the method for depositing an SiO<SB>2</SB>film, an SiC sintered material is used as a target, and sputtering is performed in an oxygen atmosphere containing argon or the like, so that an SiO<SB>2</SB>thin film is deposited on a substrate 6. Even if the SiC material has a high bending stress (about four times that of Si) and there is a difference in linear expansion coefficients, the target material suppresses the deformation of a backing plate made of copper, so that the warpage of the SiC target material is suppressed, and the cause of cracking and chipping is eliminated. Thus, an SiO<SB>2</SB>thin film (inclusive of a multilayer film with the other metallic film) having high purity and free from defects is continuously deposited on a substrate 6 of silicon, glass or the like. The film deposition rate is made higher than the case of an Si target. <P>COPYRIGHT: (C)2004,JPO |
