发明名称 MEMBER FOR PROCESSING SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a member for processing a semiconductor wafer whereby the slips on the semiconductor wafer are reduced and proper adhesion with the semiconductor wafer is obtained with high durability. SOLUTION: In a member A for processing the semiconductor wafer, the member having at least an SiC film C formed on the surface of the member, a placing portion for placing the semiconductor wafer thereon comprises convex portions 1 practically making contact with the semiconductor wafer and concave portions 2 which are formed between the convex portions 1 and keep a surface state of the formed film. An upper surface 1a of the convex portion 1 has a surface roughness Ra of 0.05 to 1.3μm. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004088077(A) 申请公布日期 2004.03.18
申请号 JP20030160419 申请日期 2003.06.05
申请人 TOSHIBA CERAMICS CO LTD 发明人 YOKOGAWA MASAYA;HAGIWARA HIROTAKA;AZUMA SHINYA;KITAYAMA KOTARO;FUJIWARA CHIEKO
分类号 H01L21/683;H01L21/205;H01L21/22;H01L21/324;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/683
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