| 摘要 |
PROBLEM TO BE SOLVED: To prevent oxidation of a silicon substrate while suppressing oxygen deficiency in a gate insulating film during the formation of a high dielectric gate insulation film on the silicon substrate. SOLUTION: After a zirconium metal film 105 is deposited on a silicon substrate 101, a hafnium oxide film 106 is deposited on the zirconium metal film 105. Thereafter, a titanium nitride film 109 serving as a gate electrode is formed on the hafnium oxide film 106. COPYRIGHT: (C)2004,JPO
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