| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystallizing method of an amorphous silicon to obtain a silicon thin film whose crystal grain diameters are large. SOLUTION: The crystallizing method firstly forms to juxtapose a plurality of band-like crystals in which a long axis direction is a Y direction to a widthwise direction when irradiating an a-Si thin film while scanning a continuously oscillating laser beam in the Y direction. Next, one from among a plurality of the crystals is selected to make a scanning start crystal 21<SB>2</SB>, and the laser beam is radiated onto the a-Si thin film while scanning from the scanning start crystal 21<SB>2</SB>in an X direction. In the following, the laser beam repeats irradiation onto the a-Si thin film while scanning from the scanning start crystal 21<SB>2</SB>in the X direction. COPYRIGHT: (C)2004,JPO
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