| 摘要 |
PROBLEM TO BE SOLVED: To inhibit formation of particles by inhibiting occurrence of abnormal discharge in a vacuum chamber in a sputtering apparatus, to improve a manufacturing yield of a product formed on a semiconductor wafer, and to increase an operating efficiency of an apparatus by improving consumption efficiency of a target. SOLUTION: In the sputtering apparatus for forming a thin film by applying a high voltage to the inside of a vacuum chamber to ionize argon gas, generating plasma by a magnetic field of a magnet arranged on a backside of the target, colliding ions to the target, and making the sputtering material scattered from the surface of the target adhere onto the semiconductor wafer, this sputtering apparatus has a recess 16 formed in the vicinity of a perimeter 7 having a low plasma density on the surface of the target 15 which faces to the semiconductor wafer, and taking a foreign material 9 causing the abnormal discharge in the recess 16 not to make it project from the surface of the target 15. COPYRIGHT: (C)2004,JPO
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