Thin film magnetic memory device capable of stably writing/reading data and method of fabricating the same

摘要

A thin film magnetic memory device includes a plurality of program cells each storing program data constituting information on a bit unit basis, each program cell having a magnetic storing part having first and second electric resistors corresponding to two magnetization directions. The thin film magnetic memory device further includes: a driver circuit for irreversibly fixing a resistance value of the magnetic storing part in the program cell to a third electric resistor; and a sense driver circuit capable of sensing whether the magnetic storing part in the program cell has the first or second electric resistance and capable of sensing whether the magnetic storing part in the program cell has any one of the first or second resistances, or the third electric resistance.