发明名称 PIXEL STRUCTURE OF THIN-FILM TRANSISTOR LIQUID CRYSTAL DISPLAY
摘要 A pixel structure of a thin-film transistor liquid crystal display. A storage capacitor is formed by simultaneously defining a doped polysilicon layer, a dielectric layer and shielding metal layer and a source/drain region of a low-temperature polysilicon thin-film transistor. The shielding metal layer is formed on the doped polysilicon layer and is electrically connected to a pixel electrode. As the area occupied by the shielding metal layer is the area of the storage capacitor, the aperture ratio is greatly enhanced.
申请公布号 US2004051821(A1) 申请公布日期 2004.03.18
申请号 US20030249422 申请日期 2003.04.08
申请人 CHENG HSIN-AN;CHIU CHAUNG-MING 发明人 CHENG HSIN-AN;CHIU CHAUNG-MING
分类号 G02F1/1368;G02F1/1362;H01L29/786;(IPC1-7):G02F1/133 主分类号 G02F1/1368
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