发明名称 |
PIXEL STRUCTURE OF THIN-FILM TRANSISTOR LIQUID CRYSTAL DISPLAY |
摘要 |
A pixel structure of a thin-film transistor liquid crystal display. A storage capacitor is formed by simultaneously defining a doped polysilicon layer, a dielectric layer and shielding metal layer and a source/drain region of a low-temperature polysilicon thin-film transistor. The shielding metal layer is formed on the doped polysilicon layer and is electrically connected to a pixel electrode. As the area occupied by the shielding metal layer is the area of the storage capacitor, the aperture ratio is greatly enhanced.
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申请公布号 |
US2004051821(A1) |
申请公布日期 |
2004.03.18 |
申请号 |
US20030249422 |
申请日期 |
2003.04.08 |
申请人 |
CHENG HSIN-AN;CHIU CHAUNG-MING |
发明人 |
CHENG HSIN-AN;CHIU CHAUNG-MING |
分类号 |
G02F1/1368;G02F1/1362;H01L29/786;(IPC1-7):G02F1/133 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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