| 发明名称 |
A METHOD OF DEPOSITING A BARRIER LAYER |
| 摘要 |
<p>A method of depositing a barrier layer on a substrate having a recess, including sputtering Tantalum in a nitrogen atmosphere wherein the flow of nitrogen is selected to deposit mixed phase bcc/betaTa and wherein the sputtered ions are sufficiently energetic to cause re-sputtering of deposited material from the base of the recess to its sidewall or sidewalls.</p> |
| 申请公布号 |
WO03072846(A9) |
申请公布日期 |
2004.03.18 |
| 申请号 |
WO2003GB00696 |
申请日期 |
2003.02.14 |
| 申请人 |
TRIKON TECHNOLOGIES LIMITED;BURGESS, STEPHEN, ROBERT;DONOHUE, HILKE |
发明人 |
BURGESS, STEPHEN, ROBERT;DONOHUE, HILKE |
| 分类号 |
C23C14/04;C23C14/06;C23C14/16;H01L21/285;H01L21/768;H01L23/532;(IPC1-7):C23C14/06 |
主分类号 |
C23C14/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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