Gate structure of non-volatile integrated circuit memory device, comprises thermal oxidation layer defining sidewall of gate structure, oxygen diffusion barrier layer on the sidewall, and floating gate with curved sidewall portion

摘要

A gate structure of a non-volatile integrated circuit memory device includes: (i) a thermal oxidation layer on a substrate below the gate structure and that defines a sidewall of the gate structure; (ii) an oxygen diffusion barrier layer on the sidewall of the gate structure; and (iii) a floating gate on the thermal oxidation layer having a curved sidewall portion. An Independent claim is also included for forming a gate structure of a non-volatile integrated circuit memory device by: (a) forming a gate structure including a floating gate (120) on an oxide layer (110) on a substrate; (b) forming an oxygen diffusion barrier layer on a sidewall of the gate structure above the oxide layer; and (c) forming a thermal oxidation layer from the oxide layer below the floating gate and on the floating gate between the oxygen diffusion barrier layer and the floating gate to define a curved sidewall portion of the floating gate.