| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a process for producing a semiconductor wafer in which the work for removing a chucking dent on the back surface of the wafer is facilitated during PCR processing following to rough polishing and the processing time is shortened. <P>SOLUTION: An edge rounded silicon wafer W is subjected to rough polishing and an Si oxide film Wa is formed on the wafer W. The back surface of the wafer W is then vacuum chucked to a holding plate C and the outer circumferential part of the wafer is subjected to second PCR processing under that state thus removing a flaw (a) at the outermost circumferential part of the wafer. Subsequently, the Si oxide film Wa is removed by HF+alkali cleaning, thus removing a chucking dent (b) made during the second time PCR processing. The work for removing the chucking dent (b) is thereby facilitated as compared with conventional process utilizing wax and processing time required for that work can be shortened. <P>COPYRIGHT: (C)2004,JPO |
