| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which never damages a metal film of an upper layer as a method for manufacturing a semiconductor device including an FET having a T-shaped gate structure such that the gate is both shortened in the length and reduced in resistance at the same time. SOLUTION: A 1st metal film 102, a 2nd metal film 103 and 3rd metal film 104 after being laminated on a semiconductor substrate 101 are selectively removed and patterned. Then the laminated metal films 102 to 104 are used as a mask to introduce impurities and thus a source area 105 and a drain area 104 are formed. Then the 3rd metal film 104 is etched and while the 3rd metal film 104 is masked so that the 2nd metal film 103 is not damaged, the 1st metal film 102 is etched from the side to form a T-shaped gate electrode. Further, the 1st metal film 102 is masked to introduce impurities into the surface of a semiconductor base body. COPYRIGHT: (C)2004,JPO
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