| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a plurality of oxide films different in film thickness in one and the same oxidation process without deterioration in reliability. SOLUTION: Selective ion implantation for nitrogen 8 is performed at -130°C or lower into a first region 3 on a semiconductor substrate 1 composed mainly of silicon. The semiconductor substrate 1 is then oxidized for the formation of a first oxide film 9 in the first region 3, and, simultaneously, a second oxide film 10 which is thicker than the first oxide film 9 is formed in a second region 4 separate from the first region 3. COPYRIGHT: (C)2004,JPO
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