发明名称 ION IMPLANTATION METHOD BY SELF-DISCHARGE ELECTRODE SYSTEM
摘要 PROBLEM TO BE SOLVED: To implant ions on the surface of a treated substrate without using an electrode antenna, to avoid a defect due to the use of the electrode antenna, to prevent drop of the processing speed due to non-use of the electrode antenna, and to uniformly form a film superior in adhesiveness on the surface of the treated substrate by overlapping pulse voltage with DC voltage. SOLUTION: The conductive treated substrate 2 is installed in a raw material gas atmosphere for plasma generation in a decompression state. Negative DC voltage against the ground potential within a range of voltage, in which electricity is not discharged, onto the treated substrate 2, and a plasma is generated to a periphery of the treated substrate. The negative high voltage pulse against the ground potential is applied to the treated substrate by overlapping the pulse with DC voltage. The ions in the plasma atmosphere are uniformly implanted on the surface of the treated substrate 2. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004087842(A) 申请公布日期 2004.03.18
申请号 JP20020247567 申请日期 2002.08.27
申请人 NAGASAKI PREFECTURE 发明人 BABA TSUNEAKI
分类号 C23C14/06;C23C14/48;H01J37/32;H01L21/265;(IPC1-7):H01L21/265 主分类号 C23C14/06
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