| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable photodiode having sensitivity in a blue, purple, and near-ultraviolet lights, and reducing dark currents. SOLUTION: This ZnSe system photodiode is configured of a p-type single crystal GaAs substrate, a super-lattice epitaxial grown on the p-type single crystal GaAs substrate in which p-type ZnSe and p-type ZnTe are repeatedly laminated for continuously changing a band gap, a p-type Zn<SB>1-x</SB>Mg<SB>x</SB>S<SB>y</SB>Se<SB>1-y</SB>layer epitaxial grown on the super-lattice, i-type Zn<SB>1-x</SB>Mg<SB>x</SB>S<SB>y</SB>Se<SB>1-y</SB>layer epitaxial grown on the p-type Zn<SB>1-x</SB>Mg<SB>x</SB>S<SB>y</SB>Se<SB>1-y</SB>, an n-type Zn<SB>1-x</SB>Mg<SB>x</SB>S<SB>y</SB>Se<SB>1-y</SB>layer epitaxial grown on the i-type Zn<SB>1-x</SB>Mg<SB>x</SB>S<SB>y</SB>Se<SB>1-y</SB>layer, an (n) metallic electrode formed on the n-type Zn<SB>1-x</SB>Mg<SB>x</SB>S<SB>y</SB>Se<SB>1-y</SB>layer, and a p-metallic electrode formed on the bottom face of the p-type single crystal GaAs substrate. COPYRIGHT: (C)2004,JPO
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