Universal pattern generator with multiplex addressing

摘要

A maskless micro-ion-beam reduction lithography (MMRL) system generates patterns of beamlets by switching individual beamlets on or off using a universal pattern generator which is positioned as the extraction electrode of the plasma source. Each aperture of the pattern generator is independently controlled to pass a beamlet. A multiplex addressing system to the individual apertures of the MMRL system is used to reduce the number of electrical connections. An additional layer of control electrodes is added. All apertures in each row of a first layer are connected to a single row address line. All apertures in each column of a second layer are connected to a single column address line. By using the combination of row and column lines, each aperture can be controlled.