| 摘要 |
<P>PROBLEM TO BE SOLVED: To make heat dissipation good, enhance electrostatic breakdown voltage, and contrive an improvement in emission efficiency and a reduction in series resistance with respect to a semiconductor light emitting device comprising a compound semiconductor, especially a GaN base semiconductor. <P>SOLUTION: A light emitting diode device 10 has a device structure 11 including at least two layers of semiconductor layers possessing different conductive types from each other. On the device structure 11, a p-side electrode 15 comprising an ITO and having translucency is formed, and a bonding pad 16 is formed in a part of region on the p-side electrode 15. On the opposite surface of the p-side electrode 15 in the device structure 11, a n-side electrode 17 comprising Ti/Au is formed. On the other hand, a metal film 18 by gilding of about 50μm in thickness is formed having the Au layer of the n-side electrode 17 as an underlying layer. <P>COPYRIGHT: (C)2004,JPO |
