METHOD AND SYSTEM FOR DRY ETCHING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a dry etching method which enables dry etching at lower temperatures, and to provide a dry etching system. SOLUTION: This dry etching method comprises (a) a process for preparing an etching device 101a in which solid-state silicon sources 133a, 133b are arranged in a chamber 103, (b) a process for laying in a chamber 103 a substrate 137 consisting of one or a plurality of kinds of compound semiconductors 137b, and (c) a process for etching the compound semiconductors 137b using an etching gas 126X containing halogen elements to form a substrate 141 to be etched. This dry etching method etches the compound semiconductors 137b in an atmosphere 139 consisting of the etching gas 126X containing halogen elements, and at least any one among silicon ions, silicon radicals and Si compounds to form the substrate 141 to be etched. COPYRIGHT: (C)2004,JPO