| 摘要 |
PROBLEM TO BE SOLVED: To improve the element integration yield, and to reduce the costs of light receiving elements. SOLUTION: This method for manufacturing an epitaxial wafer for a light receiving element is provided to form an InP buffer layer 2 on an InP substrate 1, and to successively laminate at least three layers, that is, an InGaAs layer 3, an InGaAsP layer 4, and an InP multiplication layer 5 on the InP buffer layer 2. In this case, Si<SB>2</SB>H<SB>6</SB>is used for the raw materials of Si to be added to the InP buffer layer 2 and the InP amplification layer 5 so that the carrier concentration control of those layers can be carried out, and SiH<SB>4</SB>is used for the raw materials of Si to be added to the InGaAs layer 3 and the InGaAs layer 4 so that the carrier concentration control of those layers can be carried out. COPYRIGHT: (C)2004,JPO
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