| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, its manufacturing method and a thin film heat treatment method for suppressing fear that thermal damage may be imposed to a conductive film or a substrate when various kinds of thin films such as a semiconductor thin film are instantaneously annealed by using light of high intensity and capable of improving the characteristics of these thin films. SOLUTION: In an n-channel type polycrystalline silicon TFT 1 of LDD (lightly doped drain) structure, a ground protection film 3, a polycrystalline silicon film 4 and a gate insulating film 5 are successively formed on a glass substrate 2, a gate electrode 6 is formed on a channel area 4a of the polycrystalline silicon film 4 through the gate insulating film 5 and a reflection film 7 consisting of any one of aluminium, aluminium alloy, silver, and silver alloy is formed on a titanium nitride film 6c to be the outermost surface of the gate electrode 6. COPYRIGHT: (C)2004,JPO
|
