发明名称 Novel pad structure to prompt excellent bondability for low-k intermetal dielectric layers
摘要 A method of fabricating a bonding pad anchoring structure comprising the following steps. Providing a substrate. Forming a series of grated metal layers over the substrate separated by an interleaving series of via plug layers having via plugs electrically connecting respective at least a portion of adjacent grated metal layers. The series of grated metal layers having an uppermost grated metal layer. Forming an uppermost via plug layer over the uppermost grated metal layer. The uppermost via plug layer having via plugs. Forming a bonding pad layer over the uppermost via plug layer so that the uppermost via plugs within the uppermost via plug layer electrically connect the bonding pad layer to at least a portion of the uppermost grated metal layer whereby the bonding pad layer is securely bonded to the substrate.
申请公布号 US2004052990(A1) 申请公布日期 2004.03.18
申请号 US20020243910 申请日期 2002.09.13
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 LEE TZE-LIANG;HUAN YUN-SAN
分类号 B32B9/00;H01L21/44;H01L23/485;H01L23/522;H01L23/532;(IPC1-7):B32B9/00 主分类号 B32B9/00
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