发明名称 |
Novel pad structure to prompt excellent bondability for low-k intermetal dielectric layers |
摘要 |
A method of fabricating a bonding pad anchoring structure comprising the following steps. Providing a substrate. Forming a series of grated metal layers over the substrate separated by an interleaving series of via plug layers having via plugs electrically connecting respective at least a portion of adjacent grated metal layers. The series of grated metal layers having an uppermost grated metal layer. Forming an uppermost via plug layer over the uppermost grated metal layer. The uppermost via plug layer having via plugs. Forming a bonding pad layer over the uppermost via plug layer so that the uppermost via plugs within the uppermost via plug layer electrically connect the bonding pad layer to at least a portion of the uppermost grated metal layer whereby the bonding pad layer is securely bonded to the substrate.
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申请公布号 |
US2004052990(A1) |
申请公布日期 |
2004.03.18 |
申请号 |
US20020243910 |
申请日期 |
2002.09.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
LEE TZE-LIANG;HUAN YUN-SAN |
分类号 |
B32B9/00;H01L21/44;H01L23/485;H01L23/522;H01L23/532;(IPC1-7):B32B9/00 |
主分类号 |
B32B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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