发明名称 METHOD FOR FABRICATION OF IN-LAID METAL INTERCONNECTS
摘要 <p>The present invention relates to a method for fabrication of in-laid metal inter onnects. The method comprises the steps of providing a substrate with a dielectr c material(l) on top thereof, depositing a protection layer(2) on top of the die ectric material, depositing a sacrificial layer (7) on top of the protection laye , the sacrificial layer having a mechanical strength that is lower than the mech nical strength of the protection layer, making an opening(3) through the sacrifi ial layer, through the protection layer and into the dielectric material, deposi ing a barrier layer (4)in the opening and on the sacrificial layer, depositing m tal material (5) on the barrier layer, the metal material filling the opening, re oving portions of the metal material existing beyond the opening by means of pol shing, and removing the barrier layer and the sacrificial layer in one polishing step.</p>
申请公布号 WO2004023550(A1) 申请公布日期 2004.03.18
申请号 WO2003IB03440 申请日期 2003.08.04
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V.;DAAMEN, ROEL;INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW;NGUYEN HOANG, VIET;HOOFMAN, ROMANO, J., O., M.;VERHEIJDEN, GREJA, J., A., M. 发明人 DAAMEN, ROEL;NGUYEN HOANG, VIET;HOOFMAN, ROMANO, J., O., M.;VERHEIJDEN, GREJA, J., A., M.
分类号 H01L21/3205;H01L21/304;H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L21/3205
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