Doping a semiconductor body used for production of compensation components in high voltage elements comprises implanting doping centers of ions producing a conducting type in the semiconductor body, and heat treating

摘要

Doping a semiconductor body (1, 2) comprises implanting doping centers of the ions (6) producing a conducting type in the semiconductor body, and heat treating using ion radiation so that doping of the conducting type prevails in the semiconductor body. Further heat treatment is carried out in determined regions in the semiconductor body at a higher temperature than that of the first heat treatment.