| 摘要 |
PURPOSE: An electrostatic discharge protection silicon controlled rectifier(ESD-SCR) for silicon germanium technologies is provided to protect effectively an IC by using an ESD device having an SCR. CONSTITUTION: An ESD protection device has an SCR for protecting circuitry of an IC. The SCR includes a N-doped layer(208) disposed over a substrate(203) and a first P doped region(214) disposed over the N-doped layer. At least one first N+ doped region(216) forming a cathode is disposed over the P-doped region and coupled to ground. The at least one first N+ doped region, first P-doped region, and N-doped layer form a vertical NPN transistor of the SCR. A second P doped region forming an anode is coupled to a protected pad. The second P doped region is disposed over the N-doped layer, and is laterally positioned and electrically isolated with respect to the first P doped region. The second P doped region, N-doped layer, and first P doped region form a lateral PNP transistor of the SCR.
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