| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of damage or crack at the rear surface (second main surface) of a semiconductor substrate when the face-down mounting is executed with an ultrasonic bonding process. SOLUTION: A semiconductor substrate 1 is used, in which a first main surface 1a is provided with an electrode 3 to which a bump 4 is bonded in the ultrasonic bonding process, and a recess 2 is formed on the second main surface 1b on right above the connecting position of the bump 4. Since a stress concentrated on the second main surface 1b right above the bump 4 is alleviated with deformation of the surface of recess 2, breakdown of the semiconductor substrate 1 can be controlled. COPYRIGHT: (C)2004,JPO
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