| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor and a method for manufacturing the same which realizes a high speed and a high performance and to provide a liquid crystal display device. <P>SOLUTION: A step difference 25 is formed on a gate insulating film 14, and a gate electrode 15 is formed in a sidewall state on the difference 25. Since the width of the electrode 15 formed on the film 14 is reduced as compared with a gate electrode 6 formed on a flat gate insulating film 5, a distance between a source electrode 16 and a drain electrode 17 of the thin film transistor 10 (10A) formed with the electrode 15 on the difference 25 becomes shorter than the distance between a source electrode 8 and a drain electrode 9 of the thin film transistor 1 having the electrode 6 on a flat part. Accordingly, since the transistor 10 (10A) having a high speed and a high performance is obtained by accelerating a moving speed of a carrier in a semiconductor in the transistor 10 (10A), the liquid crystal display device having a high display quality level can be realized. <P>COPYRIGHT: (C)2004,JPO</p> |
