| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystalline sulfide thin film in which proper characteristics affected by chemical bonding properties is held and film thickness after photo-induced structural phase transition (PSPT) is made extremely small. SOLUTION: A crystalline thin film composed of the sulfides of lanthanoid series or the sulfides of transition metals is irradiated with a laser beam to form a crystal structure in which structural phase transition is brought about. By this procedure, physical properties intermediate between those of oxides and those of selenides can be provided, the various characteristics of optical components, recording media, circuit components, sensors, etc., can be improved and working for making film thickness extremely thin after PSPT can be made highly precise and simplified. COPYRIGHT: (C)2004,JPO
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