| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a Ti film which sufficiently prevents generation of an RF reflection wave while forming the film with the use of a plasma CVD method. SOLUTION: This method comprises: at first, forming the Ti film in a process chamber 2 of a plasma CVD apparatus 1 (SP2); carrying the wafer W out from the process chamber 2 (SP3); subsequently cleaning the inside of the process chamber 2 with Cl<SB>2</SB>gas (SP4); then supplying H<SB>2</SB>gas into the process chamber 2 and turning it into plasma (SP5). Thereby, a remaining material such as chlorides of Ni, which may be formed in cleaning with Cl<SB>2</SB>gas, can be removed from the process chamber 2. COPYRIGHT: (C)2004,JPO
|
