Thin film semiconductor device and manufacturing method

摘要

The device includes several p-channel and n-channel thin film transistors (TFTs) which are formed on a polycrystalline silicon film (3) of a glass substrate (1). The TFTs of same channel types have threshold voltages different from one another. The TFTs of different channel types have same dopant of appropriate dose introduced into respective channel regions. Independent claims are also included for the following: (1) display device; (2) thin-film semiconductor device manufacturing method; and (3) differential amplifier circuit.