Connection and build-up-process for multi-chip-modules

摘要

Preparation of a multichip-module has a series of layers of dielectric material with embedded conductors. The dielectric material is temperature stable, base-resistant polymer having a dielectric contact of 3 or less on a non-conductive base. It forms a boundary edge for currentless, autocatalytic production of conductor paths. The dielectric material is provided with a layer of organic solvent soluble material (lift-off layer). The dielectric material and lift-off layer are structured in a lithographic step, using ether direct or indirect structuring and forming trenches in the dielectric material having an aspect ratio of 1 or more. A metallic seed layer is formed by evaporation. The lift-off layer is removed using an organic solvent and conductor paths are formed in the trenches by currentless metal deposition.