发明名称 |
A METHOD OF GROWING A SEMICONDUCTOR LAYER |
摘要 |
A method of growing a p-type nitride semiconductor material having magnesium as a p-type dopant by molecular beam epitaxy (MBE), comprises supplying ammonia gas, gallium and magnesium to an MBE growth chamber containing a substrate so as to grow a p-type nitride semiconductor material over the substrate. Magnesium is supplied to the growth chamber at a beam equivalent pressure of at least 1 10-9 mbar, and preferably in the range from 1 10-9 mbar to 1 10-7 mbar during the growth process. This provides p-type GaN that has a high concentration of free charge carriers and eliminates the need to activate the magnesium dopant atoms by annealing or irradiating the material. |
申请公布号 |
EP1397534(A2) |
申请公布日期 |
2004.03.17 |
申请号 |
EP20020738708 |
申请日期 |
2002.06.13 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
BARNES, JENNIFER, MARY;BOUSQUET, VALERIE;HOOPER, STEWART, EDWARD;HEFFERNAN, JONATHAN |
分类号 |
C23C14/06;C30B23/02;C30B29/38;H01L21/203;H01L33/00 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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