Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device

摘要

A resist pattern thickening material (1) contains resin, cross-linking agent and nitrogen compound. Independent claims are also included for: (a) manufacture of thickened resist pattern (10). The resist pattern thickening material is applied on surface of the resist pattern (3) formed on base layer (5), so that the surface of resist pattern is covered with thickening material to manufacture thickened resist pattern; and (b) manufacture of semiconductor device, which involves patterning base layer by etching.