发明名称 |
P-type group II-VI compound semiconductor crystals, growth method for such crystals, and semiconductor device made of such crystals |
摘要 |
A method of growing p-type group II-VI compound semiconductor crystals, includes a step of forming ZnO layers and ZnTe layers alternately on a ZnO substrate, the ZnO layer being not doped with impurities and having a predetermined impurity concentration, and the ZnTe layer being doped with p-type impurities N to a predetermined impurity concentration or higher. |
申请公布号 |
EP1054082(B1) |
申请公布日期 |
2004.03.17 |
申请号 |
EP20000110829 |
申请日期 |
2000.05.22 |
申请人 |
STANLEY ELECTRIC CO., LTD.;YAO, TAKAFUMI |
发明人 |
SANO, MICHIHIRO;YAO, TAKAFUMI |
分类号 |
C30B23/02;C30B29/16;C30B29/48;H01L21/363;H01L33/06;H01L33/28 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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