MEMORY DEVICE INCLUDING MEMORY CELLS HAVING COMPLEMENTARY DATA

摘要

PURPOSE: A memory device including memory cells having complementary data is provided to reduce the number of sense amplifiers and the power consumption by arranging a memory cell between a couple of memory cells and a complementary memory cell and connecting selectively the selected memory cell and the complementary memory cell to the sense amplifier. CONSTITUTION: A memory device including memory cells having complementary data includes a memory cell array block(610), the first sense amplifier(640), the second sense amplifier(650), the first switch(620), and the second switch(630). The memory cell array block(610) includes the first to the fourth memory cells and the first to the fourth complementary memory cells. The first sense amplifier(640) is arranged at a top end part of the memory cell array block. The second sense amplifier(650) is arranged at the end of the memory cell array block. The first switch(620) is used for connecting the first sense amplifier to bit lines between the first memory cell and the complementary memory cells or connecting the second sense amplifier to the bit lines between the second memory cell and the complementary memory cells. The second switch(630) is used for connecting the first sense amplifier to bit lines between the third memory cell and the complementary memory cells or connecting the second sense amplifier to the bit lines between the fourth memory cell and the complementary memory cells.