| 摘要 |
A semiconductor device wherein some parts of a circuit are disposed on Si-Ge regions and others are implemented in Silicon substrate regions of the chip. The Si-Ge region provides that carrier flow is forced to the surface channel region which helps reduce short channel effects. A method of making such a semiconductor device is also provided and includes steps of forming a thermal oxide layer on a Silicon substrate, masking at least a portion of the thermal oxide layer, removing at least a portion of the thermal oxide layer in order to expose a portion of the Silicon substrate, epitaxially growing an Si-Ge layer on the exposed portion of the Silicon substrate, epitaxially growing a Silicon layer on the Si-Ge layer, and continuing manufacture of the device by forming a circuit on the Si-Ge regions and non-Si-Ge regions of the semiconductor device.
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