发明名称 |
Insulated high speed semiconductor switching device |
摘要 |
A semiconductor device has a semiconductor element housed in a ceramic cylinder as an insulated vessel, and plural gate terminals. Plural through-holes are formed in the ceramic cylinder. Leads connected to gate terminals pass through their respective through-holes. The leads are connected to internal gate terminals (electrodes). Each internal gate terminal is provided for each lead and connected electrically to a gate electrode of the semiconductor element.
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申请公布号 |
US6707144(B2) |
申请公布日期 |
2004.03.16 |
申请号 |
US20020252568 |
申请日期 |
2002.09.24 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TAGUCHI KAZUNORI |
分类号 |
H01L29/744;H01L23/04;H01L23/047;H01L23/053;H01L23/10;H01L23/48;H01L29/74;(IPC1-7):H01L23/48 |
主分类号 |
H01L29/744 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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