发明名称 Insulated high speed semiconductor switching device
摘要 A semiconductor device has a semiconductor element housed in a ceramic cylinder as an insulated vessel, and plural gate terminals. Plural through-holes are formed in the ceramic cylinder. Leads connected to gate terminals pass through their respective through-holes. The leads are connected to internal gate terminals (electrodes). Each internal gate terminal is provided for each lead and connected electrically to a gate electrode of the semiconductor element.
申请公布号 US6707144(B2) 申请公布日期 2004.03.16
申请号 US20020252568 申请日期 2002.09.24
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TAGUCHI KAZUNORI
分类号 H01L29/744;H01L23/04;H01L23/047;H01L23/053;H01L23/10;H01L23/48;H01L29/74;(IPC1-7):H01L23/48 主分类号 H01L29/744
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