ETCH METHOD FOR FABRICATING CONTROL GATE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: An etch method for fabricating a control gate of a semiconductor device is provided to prevent residual poly of a cone type from being generated by eliminating a native oxide located on the sidewall of a hole while barrel reactor equipment is used. CONSTITUTION: Floating gate(FG) poly(20) is deposited on a silicon substrate(10). The native oxide is eliminated by using the barrel reactor equipment. An etch process is performed to leave the residual poly of a cone type. When the native oxide is removed, an isotropic etch process is performed even on an FG poly sidewall area inside the hole.