发明名称 Memory device command signal generator
摘要 A command generator for a dynamic random access memory decrements a counter from an initial counter value which is a function of the clock speed. The output of the counter is decoded to generate various command signals for the DRAM. In particular, each command signal is generated by a respective counter value, with the correspondency between counter values and command signals being a function of the clock speed. The counter decrements from larger initial values at higher clock speeds, and the command signals are generally issued by the decoder at higher counter values for higher clock speeds. As a result of the lack of correspondency between the timing of the command signals and the number of clock cycles occurring during a memory access, the timing of the command signals may be selected to optimize the speed of the DRAM desired despite substantial variations in clock speed.
申请公布号 US6708262(B2) 申请公布日期 2004.03.16
申请号 US20010812622 申请日期 2001.03.19
申请人 MICRON TECHNOLOGY, INC. 发明人 MANNING TROY A.
分类号 G11C11/407;G11C7/22;G11C11/401;G11C11/4076;(IPC1-7):G06F12/00 主分类号 G11C11/407
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