METHOD FOR FORMING LOWER ELECTRODE OF CAPACITOR

摘要

PURPOSE: A method for forming a lower electrode of a capacitor is provided to improve process efficiency by forming various constitution elements by a small number of processes, and to prevent the lower electrode from being fallen and increase capacitance by supporting the lower portion of the lower electrode. CONSTITUTION: A predetermined region of an insulation layer on a semiconductor substrate(300) is etched to form the first opening. A passivation layer is formed on the entire insulation layer in such a manner that the passivation layer is thinner on the bottom of the first opening than on the side surface of the first opening and the top of the insulation layer. The passivation layer is so etched to expose only the bottom of the first opening. The first opening is buried by the first oxide to form a buried layer. The second oxide is deposited on the substrate including the buried layer to form an interlayer oxide. A part of the interlayer oxide is anisotropically etched to expose the top of the buried layer so that the second opening is formed. A wet etch process is performed on the buried layer exposed to the bottom of the second opening so as to expose the first opening again. A conductive layer is uniformly formed on the interlayer oxide including the first and second openings. The conductive layer formed on the interlayer oxide is removed to form a conductive layer pattern formed along the first and second openings. The interlayer oxide is eliminated.