Manufacturing of capacitors with metal armatures

摘要

A method for forming a capacitor with metal armatures in metallization levels above an integrated circuit, including the steps of: depositing over the surface of an integrated circuit an insulating layer having a thickness ranging between 0.5 and 1.5 mum; digging into the insulating layer to form trenches, of which at least a portion in top view is parallel and separate from one trench to the other; depositing and leveling a metallic material to form conductive lines in the trenches; locally removing the insulating layer to remove it at least from all the intervals separating two conductive lines; conformally depositing a dielectric; and depositing and etching a second metallic material to at least completely fill the intervals between lines.