WAFER PROBE HAVING VERTICAL TYPE CANTILEVER BEAM AND MANUFACTURING METHOD OF PROBE CARD

摘要

PURPOSE: A wafer probe having a vertical type cantilever beam and a manufacturing method of a probe card are provided to be capable of carrying out the burn-in test for a wafer state and being easily connected with a PCB(Printed Circuit Board). CONSTITUTION: An N+ type diffusion layer(20), an N type epitaxial layer(30), and a nitride layer are sequentially formed on a silicon wafer(10). A predetermined pattern is formed at the backside of the silicon wafer for electrically connecting a probe metal line with a PCB. A hole(300) is formed at the silicon wafer by carrying out an etching process using a protection layer. A conductive layer is formed in the hole for connecting a cantilever beam type probe contact portion with the PCB. The N+ type diffusion layer is transformed into a porous silicon layer. A three-dimensional cantilever beam type probe is formed by removing the porous silicon layer. A probe substrate having a vertical type probe is formed in a furnace by carrying out a heat treatment using the thermal stress between thin films. A probe card is completed by electrically connecting the probe substrate to the PCB substrate.