发明名称 |
Method for forming refractory metal-silicon-nitrogen capacitors and structures formed |
摘要 |
A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure and the structure formed are described. In the method, a pre-processed semiconductor substrate is first positioned in a sputtering chamber. Ar gas is then flown into the sputtering chamber to sputter deposit a first refractory metal-silicon-nitrogen layer on the substrate from a refractory metal silicide target, or from two targets of a refractory metal and a silicon. N2 gas is then flown into the sputtering chamber until that the concentration of N2 gas in the chamber is at least 35% to sputter deposit a second refractory metal-silicon-nitrogen layer on top of the first refractory metal-silicon-nitrogen layer. The N2 gas flow is then stopped to sputter deposit a third refractory metal-silicon-nitrogen layer on top of the second refractory metal-silicon-nitrogen layer. The multi-layer stack of the refractory metal-silicon-nitrogen is then photolithographically formed into a capacitor.
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申请公布号 |
US6707097(B2) |
申请公布日期 |
2004.03.16 |
申请号 |
US20030346437 |
申请日期 |
2003.01.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CABRAL, JR. CYRIL;CLEVENGER LAWRENCE;HSU LOUIS;WONG KEITH KWONG HON |
分类号 |
C23C14/00;C23C14/06;H01L21/02;H01L21/285;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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