| 摘要 |
A semiconductor memory device comprises memory cell blocks, a first redundancy cell array for each of the memory blocks, a redundancy cell block, a second redundancy cell array for the redundancy block, a first defect rescuing circuit configured to output a replacement signal for replacing a defective cell array in the redundancy block with the first redundancy array, and a second defect rescuing circuit configured to output a replacement signal for replacing a defective memory block with the redundancy block, wherein the first defect rescuing circuit has a gate circuit which outputs the output replacement signal of the first address sensing circuit as valid at an address at which the second defect rescuing circuit is not implemented, and which outputs a signal indicating which block is a defective block outputted by the second defect rescuing circuit as valid at an address at which the second defect rescuing circuit is implemented.
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