| 摘要 |
A chemical mechanical polishing (CMP) machine has a polish platen, having at least a first ring-shaped region and a second ring-shaped region. A control system for in-situ feeding back a polish profile of the CMP machine has at least a first sensor and a second sensor, respectively installed in the first and the second ring-shaped regions, and a control unit electrically connected to the first sensor and the second sensor for comparing the polish rates of portions of the wafer over the first and the second ring-shaped regions, respectively, according to signals of the first and the second sensors, and adjusting amounts of a slurry supplied by first and second slurry pump valves, corresponding to the first and second ring-shaped regions, according to a predetermined process, or adjusting forces loaded to the first and second regions of the wafer according to the predetermined process.
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