| 摘要 |
PURPOSE: A simulation method for inspecting a defect of semiconductor photoresist is provided to shorten an interval of experiment time and reduce fabricating cost by forming a simulated mask pattern after the density and size of a mask pattern necessary for forming a circuit pattern is determined, by determining whether the semiconductor photoresist is defective and by using the result of the determination in a real fabricating process. CONSTITUTION: The density of a circuit pattern for inspecting the defective development of the photoresist is determined(S102). The size of the circuit pattern for inspecting the defective development of the photoresist is determined(S104). The simulated mask pattern is formed based upon the density and size of the circuit pattern(S106). A process for selecting and experimenting the photoresist is performed by using the simulated mask pattern(S108). The data regarding whether the development of the photoresist is defective is extracted(S110). The data regarding whether the development of the photoresist is defective is used in the real semiconductor fabricating process(S112).
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