METHOD FOR FORMING VERTICAL PROFILE BY USING DAMASCENE GATE

摘要

PURPOSE: A method for forming a vertical profile by using a damascene gate is provided to prevent a direct current(DC) fail by controlling critical dimension(CD) in an etch process of a nitride layer and by performing an implant process after the vertical profile is generated. CONSTITUTION: A gate oxide(20) is formed on a silicon substrate(10). An implant process is performed to form a lightly-doped-drain(LDD)(40). After a nitride layer is deposited and patterned, the nitride layer is etched according to gate CD. Poly is deposited. A damascene gate is formed even in a top area of nitride. After silicide(90) is formed in the damascene gate, a sidewall nitride etch process is performed to form a sidewall(100) by using high selectivity of the silicide and the nitride layer. A source/drain implant process is performed to form a source/drain.