| 发明名称 |
Light emitting device and fabricating method thereof |
| 摘要 |
The light emitting device according to the present invention is characterized in that a gate electrode comprising plurality of conductive films is formed, and concentration of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided. |
| 申请公布号 |
US6706544(B2) |
申请公布日期 |
2004.03.16 |
| 申请号 |
US20010837324 |
申请日期 |
2001.04.19 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;FUKUNAGA TAKESHI;KOYAMA JUN;INUKAI KAZUTAKA |
| 分类号 |
H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/336 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
