| 摘要 |
PURPOSE: A method for forming a gate of a transistor is provided to form NMOS and PMOS gates with a uniform profile, by forming a gate region after the first insulation layer made of a silicon nitride layer is patterned, by filling polysilicon in the gate region to form the NMOS and PMOS gates and by performing an ion implantation process on the gate of an NMOS transistor. CONSTITUTION: A gate oxide layer and the first insulation layer are sequentially formed on a semiconductor substrate(100). The first photoresist layer pattern for defining a gate region is formed on the first insulation layer. The first insulation layer is patterned according to the first photoresist layer pattern to form NMOS and PMOS gate regions. After the first photoresist layer pattern is removed, a conductive layer is formed to completely fill the NMOS and PMOS gate regions. The conductive layer is removed to completely expose the upper portion of the patterned first insulation layer so that the NMOS and PMOS gates(112a,112b) are formed on the patterned first insulation layer. After an ion implantation process is performed on a region where the gate of the NMOS transistor is formed, the patterned first insulation layer is eliminated.
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